Shopping cart

Subtotal: $0.00

ES1GLHR3G

Taiwan Semiconductor Corporation
ES1GLHR3G Preview
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A SUB SMA
$0.27
Available to order
Reference Price (USD)
3,600+
$0.09738
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 400 V
  • Capacitance @ Vr, F: 8pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
  • Operating Temperature - Junction: -55°C ~ 150°C

Related Products

Renesas Electronics America Inc

1SS270-E

Diodes Incorporated

SDT8A60VP5-13

Vishay General Semiconductor - Diodes Division

BYG21K-E3/TR

Microchip Technology

JANTX1N5554/TR

Diodes Incorporated

S2A-13-F

Micro Commercial Co

ER3JB-TP

Infineon Technologies

IDH03SG60CXKSA2

Diodes Incorporated

B380B-13-F

Vishay General Semiconductor - Diodes Division

VS-85HFR20

STMicroelectronics

BAT43

Top