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ES1J R3G

Taiwan Semiconductor Corporation
ES1J R3G Preview
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO214AC
$0.24
Available to order
Reference Price (USD)
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$0.24385
500+
$0.2414115
1000+
$0.238973
1500+
$0.2365345
2000+
$0.234096
2500+
$0.2316575
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Specifications

  • Product Status: Discontinued at Digi-Key
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Capacitance @ Vr, F: 18pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C

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