ESH1B-M3/5AT
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 1A DO214AC
$0.16
Available to order
Reference Price (USD)
15,000+
$0.14000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The ESH1B-M3/5AT by Vishay General Semiconductor - Diodes Division is a top-tier single rectifier diode designed for high-efficiency power conversion. Belonging to the Diodes - Rectifiers - Single category, it features ultra-fast recovery times and minimal power dissipation, making it perfect for switch-mode power supplies and DC-DC converters. Its versatile applications span industrial motor drives, solar inverters, and consumer electronics, where consistent performance is essential. Engineered for durability, the ESH1B-M3/5AT ensures long-term reliability even in harsh operating conditions. Trust Vishay General Semiconductor - Diodes Division for cutting-edge semiconductor solutions that drive innovation.
Specifications
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 25 ns
- Current - Reverse Leakage @ Vr: 1 µA @ 100 V
- Capacitance @ Vr, F: 25pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: DO-214AC (SMA)
- Operating Temperature - Junction: -55°C ~ 175°C
Related Products
Panjit International Inc.
SVT15100U_R1_00001
Diodes Incorporated
BAS40W-7-F
Micro Commercial Co
SK88L-TP
SMC Diode Solutions
SDURB1560
SURGE
SL54B
Taiwan Semiconductor Corporation
TPAR3J S1G
Yangzhou Yangjie Electronic Technology Co.,Ltd
GS1M-F1-0000HF
Microchip Technology
1N6074US
Vishay General Semiconductor - Diodes Division
BYT51M-TR
Microchip Technology