F4100R17N3E4BPSA1
Infineon Technologies
Infineon Technologies
LOW POWER ECONO
$253.78
Available to order
Reference Price (USD)
1+
$253.78000
500+
$251.2422
1000+
$248.7044
1500+
$246.1666
2000+
$243.6288
2500+
$241.091
Exquisite packaging
Discount
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Infineon Technologies's F4100R17N3E4BPSA1 stands out in the Transistors - IGBTs - Modules category with its revolutionary RC-IGBT design. This discrete semiconductor product merges the advantages of IGBTs and diodes in a single chip for compact power solutions. The module boasts exceptional features like: 650V-1700V voltage range, solderless press-fit contacts, and humidity-resistant coating. It's particularly suited for photovoltaic inverters, uninterruptible power supplies, and medical imaging equipment. For example, the F4100R17N3E4BPSA1 enables higher power density in MRI gradient amplifiers. Choose Infineon Technologies for IGBT modules that push performance boundaries.
Specifications
- Product Status: Active
- IGBT Type: -
- Configuration: -
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Power - Max: -
- Vce(on) (Max) @ Vge, Ic: -
- Current - Collector Cutoff (Max): -
- Input Capacitance (Cies) @ Vce: -
- Input: -
- NTC Thermistor: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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