F411MR12W2M1B76BOMA1
Infineon Technologies
Infineon Technologies
LOW POWER EASY AG-EASY2B-2
$370.16
Available to order
Reference Price (USD)
1+
$370.16000
500+
$366.4584
1000+
$362.7568
1500+
$359.0552
2000+
$355.3536
2500+
$351.652
Exquisite packaging
Discount
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The F411MR12W2M1B76BOMA1 from Infineon Technologies is a versatile and high-efficiency component in the Discrete Semiconductor Products lineup. As part of the Transistors - FETs, MOSFETs - Arrays family, it offers excellent thermal stability and low gate charge, making it ideal for high-power applications. From renewable energy systems to telecommunications infrastructure, the F411MR12W2M1B76BOMA1 provides reliable performance in demanding environments. Choose Infineon Technologies for innovative semiconductor solutions that drive technological advancement.
Specifications
- Product Status: Last Time Buy
- FET Type: 4 N-Channel (Half Bridge)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 100A (Tj)
- Rds On (Max) @ Id, Vgs: 11.3mOhm @ 100A, 15V
- Vgs(th) (Max) @ Id: 5.55V @ 40mA
- Gate Charge (Qg) (Max) @ Vgs: 248nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds: 7.36nF @ 800V
- Power - Max: -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-EASY1B-2
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