F423MR12W1M1PB11BPSA1
Infineon Technologies
Infineon Technologies
MOSFET MODULE 1200V 4PACK
$222.74
Available to order
Reference Price (USD)
1+
$222.74000
500+
$220.5126
1000+
$218.2852
1500+
$216.0578
2000+
$213.8304
2500+
$211.603
Exquisite packaging
Discount
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Discover the power of Infineon Technologies's F423MR12W1M1PB11BPSA1, a premium IGBT module in the Transistors - IGBTs - Modules classification. This discrete semiconductor solution offers ultra-low conduction losses and avalanche ruggedness for harsh environments. The module's unique selling points include: VCE(sat) negative temperature coefficient, aluminum nitride substrate, and press-pack technology. Major application sectors include rail transportation, marine propulsion, and aerospace power systems. The F423MR12W1M1PB11BPSA1 performs exceptionally well in high-voltage DC transmission and pulsed power applications. With Infineon Technologies's F423MR12W1M1PB11BPSA1, you get unmatched reliability in power electronics designs.
Specifications
- Product Status: Last Time Buy
- IGBT Type: Trench
- Configuration: Full Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 50 A
- Power - Max: 20 mW
- Vce(on) (Max) @ Vge, Ic: -
- Current - Collector Cutoff (Max): -
- Input Capacitance (Cies) @ Vce: 3.68 nF @ 800 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-EASY1B-2
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