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FCB110N65F

onsemi
FCB110N65F Preview
onsemi
MOSFET N-CH 650V 35A D2PAK
$5.84
Available to order
Reference Price (USD)
800+
$2.75425
1,600+
$2.58013
2,400+
$2.45825
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 110mOhm @ 17.5A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 3.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 4895 pF @ 100 V
  • FET Feature: -
  • Power Dissipation (Max): 357W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D²PAK (TO-263)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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