FCB199N65S3
onsemi
onsemi
MOSFET N-CH 650V 14A D2PAK
$3.21
Available to order
Reference Price (USD)
800+
$1.29708
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the FCB199N65S3 by onsemi, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the FCB199N65S3 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 199mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 1.4mA
- Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1225 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 98W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D²PAK (TO-263)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
STMicroelectronics
STP18N55M5
Fairchild Semiconductor
HUFA75639S3ST
Alpha & Omega Semiconductor Inc.
AON6224
Infineon Technologies
IPL60R365P7AUMA1
STMicroelectronics
STN1NK60Z
Infineon Technologies
ISP75DP06LMXTSA1
Infineon Technologies
IRF300P227
Infineon Technologies
AUIRFN8405TR
Infineon Technologies
BUZ31HXKSA1
Infineon Technologies