FCB260N65S3
onsemi
onsemi
MOSFET N-CH 650V 12A D2PAK
$2.83
Available to order
Reference Price (USD)
800+
$1.13821
Exquisite packaging
Discount
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The FCB260N65S3 from onsemi sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to onsemi's FCB260N65S3 for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 260mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 1.2mA
- Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 90W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D²PAK (TO-263)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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