Shopping cart

Subtotal: $0.00

FCD260N65S3

onsemi
FCD260N65S3 Preview
onsemi
MOSFET N-CH 650V 12A TO252
$2.20
Available to order
Reference Price (USD)
2,500+
$0.75601
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 260mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1.2mA
  • Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 400 V
  • FET Feature: -
  • Power Dissipation (Max): 90W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Related Products

Texas Instruments

CSD25213W10

Vishay Siliconix

SIR104ADP-T1-RE3

STMicroelectronics

STO33N60M6

Infineon Technologies

IPD80R4K5P7ATMA1

Infineon Technologies

BSP135L6327HTSA1

Toshiba Semiconductor and Storage

TK160F10N1L,LXGQ

Toshiba Semiconductor and Storage

TK60S06K3L(T6L1,NQ

Vishay Siliconix

IRL540PBF

STMicroelectronics

STP45NF06

STMicroelectronics

STW13NK60Z

Top