FCD360N65S3R0
onsemi
onsemi
MOSFET N-CH 650V 10A DPAK
$1.71
Available to order
Reference Price (USD)
2,500+
$0.69992
5,000+
$0.66686
12,500+
$0.64324
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the FCD360N65S3R0 from onsemi, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the FCD360N65S3R0 ensures reliable performance in demanding environments. Upgrade your circuit designs with onsemi's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 360mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 83W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-PAK (TO-252)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
STMicroelectronics
STU3N62K3
Infineon Technologies
IPI084N06L3GXKSA1
onsemi
NTD4804NA-35G
Vishay Siliconix
SQJ457EP-T1_GE3
Infineon Technologies
BSP373NH6327XTSA1
Infineon Technologies
IPB50CN10NGATMA1
Infineon Technologies
BSZ088N03LSG
Diodes Incorporated
DMT6013LSS-13
Microchip Technology
APT80F60J
STMicroelectronics