FCH150N65F-F155
onsemi
onsemi
MOSFET N-CH 650V 24A TO247
$4.84
Available to order
Reference Price (USD)
450+
$2.82813
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power electronics with the FCH150N65F-F155 single MOSFET from onsemi. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the FCH150N65F-F155 combines cutting-edge technology with onsemi's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id: 5V @ 2.4mA
- Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3737 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 298W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
Related Products
STMicroelectronics
STD1HN60K3
Nexperia USA Inc.
PSMN2R0-60PSRQ
STMicroelectronics
STS11NF30L
IXYS
IXFA10N60P
Fairchild Semiconductor
HRF3205_NL
Fairchild Semiconductor
FQU4N50TU
Panjit International Inc.
PJD60R980E_L2_00001
Vishay Siliconix
SIHH250N60EF-T1GE3
Vishay Siliconix
SIHB12N60E-GE3
STMicroelectronics