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FCH165N65S3R0-F155

onsemi
FCH165N65S3R0-F155 Preview
onsemi
MOSFET N-CH 650V 19A TO247-3
$2.54
Available to order
Reference Price (USD)
450+
$2.55956
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 165mOhm @ 9.5A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1.9mA
  • Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V
  • FET Feature: -
  • Power Dissipation (Max): 154W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3

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