FCHD190N65S3R0-F155
onsemi
onsemi
MOSFET N-CH 650V 17A TO247
$5.01
Available to order
Reference Price (USD)
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$5.01000
500+
$4.9599
1000+
$4.9098
1500+
$4.8597
2000+
$4.8096
2500+
$4.7595
Exquisite packaging
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Optimize your power electronics with the FCHD190N65S3R0-F155 single MOSFET from onsemi. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the FCHD190N65S3R0-F155 combines cutting-edge technology with onsemi's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 190mOhm @ 8.5A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 390µA
- Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 144W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
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