FCP25N60N-F102
Fairchild Semiconductor
Fairchild Semiconductor
MOSFET N-CH 600V 25A TO220-3
$2.82
Available to order
Reference Price (USD)
800+
$3.25433
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the FCP25N60N-F102 by Fairchild Semiconductor, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The FCP25N60N-F102 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Fairchild Semiconductor.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 125mOhm @ 12.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 3352 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 216W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
Related Products
STMicroelectronics
STF20N65M5
Infineon Technologies
BSP92PH6327XTSA1
Infineon Technologies
IPT65R033G7XTMA1
Fairchild Semiconductor
IRFS634B
Diodes Incorporated
DMN33D8LT-7
STMicroelectronics
STD16N65M2
IXYS
IXTA48P05T
Toshiba Semiconductor and Storage
TK31N60X,S1F
onsemi
FDMS86255
Renesas Electronics America Inc