FCP600N65S3R0
onsemi
onsemi
MOSFET N-CH 650V 6A TO220-3
$0.76
Available to order
Reference Price (USD)
800+
$0.92236
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The FCP600N65S3R0 from onsemi redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the FCP600N65S3R0 offers the precision and reliability you need. Trust onsemi to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 600µA
- Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 465 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 54W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
Related Products
Infineon Technologies
AUIRFR3806TRL
Diodes Incorporated
DMP2130L-7
Infineon Technologies
IPI60R299CPXKSA1
Renesas Electronics America Inc
2SK2738-E
Sanken
GKI04031
Panjit International Inc.
PJD9N10A_L2_00001
onsemi
FQA36P15
Vishay Siliconix
SQM25N15-52_GE3
Panjit International Inc.
PJQ4411P_R2_00001
STMicroelectronics