FCPF11N60NT
onsemi
onsemi
MOSFET N-CH 600V 10.8A TO220F
$4.27
Available to order
Reference Price (USD)
1+
$3.23000
10+
$2.88400
100+
$2.36480
500+
$1.91492
1,000+
$1.61500
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power electronics with the FCPF11N60NT single MOSFET from onsemi. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the FCPF11N60NT combines cutting-edge technology with onsemi's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Last Time Buy
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 10.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 299mOhm @ 5.4A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 35.6 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1505 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 32.1W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220F-3
- Package / Case: TO-220-3 Full Pack
Related Products
Texas Instruments
CSD18535KTTT
onsemi
NTMFS4C020NT1G
onsemi
NTB23N03RG
IXYS
IXTQ150N15P
onsemi
FCA20N60F
Nexperia USA Inc.
BUK9Y22-30B,115
onsemi
FDP8D5N10C
onsemi
FQPF8N60C
Infineon Technologies
IRF630NPBF
Infineon Technologies