FCX619QTA
Diodes Incorporated
Diodes Incorporated
PWR LOW SAT TRANSISTOR SOT89 T&R
$0.32
Available to order
Reference Price (USD)
1+
$0.32054
500+
$0.3173346
1000+
$0.3141292
1500+
$0.3109238
2000+
$0.3077184
2500+
$0.304513
Exquisite packaging
Discount
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Enhance your circuit designs with the FCX619QTA Bipolar Junction Transistor (BJT) from Diodes Incorporated. This single BJT transistor offers exceptional performance in amplification and switching applications. Its high gain and low power dissipation make it suitable for use in audio equipment, sensors, and communication devices. The FCX619QTA is built to withstand harsh environments, ensuring reliability in industrial and consumer applications. Trust Diodes Incorporated to deliver high-quality discrete semiconductor products that meet your technical requirements.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 3 A
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Vce Saturation (Max) @ Ib, Ic: 320mV @ 100mA, 2.75A
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 200mA, 2V
- Power - Max: 700 mW
- Frequency - Transition: 165MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: SOT-89-3
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