FDA20N50-F109
onsemi
onsemi
MOSFET N-CH 500V 22A TO3PN
$1.96
Available to order
Reference Price (USD)
1+
$3.92000
10+
$3.49800
450+
$2.58831
900+
$2.09863
1,350+
$1.95873
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power electronics with the FDA20N50-F109 single MOSFET from onsemi. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the FDA20N50-F109 combines cutting-edge technology with onsemi's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 230mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 59.5 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 3120 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 280W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3PN
- Package / Case: TO-3P-3, SC-65-3
Related Products
Vishay Siliconix
IRF740PBF-BE3
onsemi
SVD5865NLT4G
Texas Instruments
CSD18510Q5BT
IXYS
IXFH400N075T2
Vishay Siliconix
SUM90142E-GE3
STMicroelectronics
STP10NK80Z
Vishay Siliconix
SIHF35N60E-GE3
Infineon Technologies
BSC098N10NS5ATMA1
Fairchild Semiconductor
FDFMA2P853
Vishay Siliconix