FDB0190N807L
onsemi
onsemi
MOSFET N-CH 80V 270A TO263-7
$6.20
Available to order
Reference Price (USD)
800+
$3.37526
1,600+
$3.16188
2,400+
$3.01251
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the FDB0190N807L single MOSFET from onsemi. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust onsemi's FDB0190N807L for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 270A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
- Rds On (Max) @ Id, Vgs: 1.7mOhm @ 34A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 249 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 19110 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263-7
- Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Related Products
onsemi
FDN304PZ
Fairchild Semiconductor
HRF3205
onsemi
NTHS5441T1G
onsemi
FQP6N40CF
Infineon Technologies
IRFBA1404PPBF
Torex Semiconductor Ltd
XP231P02013R-G
onsemi
FDMC7660S
Renesas Electronics America Inc
2SJ128-AZ
Infineon Technologies
IRL1404PBF-INF
Infineon Technologies