FDB8896
onsemi
onsemi
MOSFET N-CH 30V 19A/93A TO263AB
$1.56
Available to order
Reference Price (USD)
800+
$0.90780
1,600+
$0.82441
2,400+
$0.77229
5,600+
$0.73581
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The FDB8896 by onsemi is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the FDB8896 is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 93A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 5.7mOhm @ 35A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2525 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 80W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D²PAK (TO-263)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Infineon Technologies
IPDD60R145CFD7XTMA1
Vishay Siliconix
SQJ414EP-T1_GE3
Rohm Semiconductor
R6511KNJTL
Infineon Technologies
AUIRFS8403TRL
Panjit International Inc.
PJQ4444P_R2_00001
IXYS
IXTH60N20X4
onsemi
NDD60N745U1-1G
IXYS
IXTP14N60PM
Central Semiconductor Corp
CXDM1002N TR PBFREE
Microchip Technology