FDC6301N
onsemi
onsemi
MOSFET 2N-CH 25V 220MA SSOT6
$0.52
Available to order
Reference Price (USD)
3,000+
$0.12524
6,000+
$0.11765
15,000+
$0.11006
30,000+
$0.10095
75,000+
$0.09715
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The FDC6301N from onsemi is a versatile and high-efficiency component in the Discrete Semiconductor Products lineup. As part of the Transistors - FETs, MOSFETs - Arrays family, it offers excellent thermal stability and low gate charge, making it ideal for high-power applications. From renewable energy systems to telecommunications infrastructure, the FDC6301N provides reliable performance in demanding environments. Choose onsemi for innovative semiconductor solutions that drive technological advancement.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 220mA
- Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 10V
- Power - Max: 700mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: SuperSOT™-6
Related Products
onsemi
NTLJD3181PZTAG
Diodes Incorporated
DMN3055LFDBQ-13
Alpha & Omega Semiconductor Inc.
AOCA32112E
onsemi
FDC6401N
onsemi
NTMFD4C87NT1G
Diodes Incorporated
DMP3085LSD-13
Taiwan Semiconductor Corporation
TSM200N03DPQ33 RGG
Diodes Incorporated
DMC4050SSD-13
EPC
EPC2102
Infineon Technologies