FDD3510H
onsemi
onsemi
MOSFET N/P-CH 80V 4.3/2.8A TO252
$1.25
Available to order
Reference Price (USD)
2,500+
$0.53529
5,000+
$0.51001
12,500+
$0.49194
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The FDD3510H by onsemi is a high-performance component within the Discrete Semiconductor Products category. Designed as part of the Transistors - FETs, MOSFETs - Arrays series, it offers exceptional durability and efficiency for power-sensitive applications. From medical equipment to aerospace technology, the FDD3510H provides reliable operation under stringent conditions. onsemi's innovative approach ensures this MOSFET array meets the needs of modern electronics.
Specifications
- Product Status: Obsolete
- FET Type: N and P-Channel, Common Drain
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 80V
- Current - Continuous Drain (Id) @ 25°C: 4.3A, 2.8A
- Rds On (Max) @ Id, Vgs: 80mOhm @ 4.3A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 40V
- Power - Max: 1.3W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
- Supplier Device Package: TO-252 (DPAK)
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