FDD86113LZ
onsemi
onsemi
MOSFET N-CH 100V 4.2A/5.5A DPAK
$1.34
Available to order
Reference Price (USD)
2,500+
$0.60310
5,000+
$0.57461
12,500+
$0.55426
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The FDD86113LZ from onsemi redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the FDD86113LZ offers the precision and reliability you need. Trust onsemi to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta), 5.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 104mOhm @ 4.2A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 285 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 29W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Infineon Technologies
IPA50R800CEXKSA2
Infineon Technologies
AUIRFR3504Z
STMicroelectronics
STW20NK50Z
Fairchild Semiconductor
FDD6670A_NL
Vishay Siliconix
IRF634PBF
STMicroelectronics
STW23N85K5
Infineon Technologies
IPB65R225C7ATMA2
Rohm Semiconductor
SCT4036KRHRC15
Diodes Incorporated
DMP32D4S-13
Microchip Technology