FDG330P
Fairchild Semiconductor
Fairchild Semiconductor
MOSFET P-CH 12V 2A SC88
$0.34
Available to order
Reference Price (USD)
1+
$0.34000
500+
$0.3366
1000+
$0.3332
1500+
$0.3298
2000+
$0.3264
2500+
$0.323
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The FDG330P from Fairchild Semiconductor redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the FDG330P offers the precision and reliability you need. Trust Fairchild Semiconductor to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12 V
- Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 110mOhm @ 2A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 477 pF @ 6 V
- FET Feature: -
- Power Dissipation (Max): 480mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-88 (SC-70-6)
- Package / Case: 6-TSSOP, SC-88, SOT-363
Related Products
Microchip Technology
APT20M22JVRU2
Vishay Siliconix
IRFIBC40GLCPBF
Alpha & Omega Semiconductor Inc.
AONS36316
Renesas Electronics America Inc
2SK3712-AZ
Diodes Incorporated
DMP2035UFCL-7
Nexperia USA Inc.
PSMN2R0-55YLHX
onsemi
NTB90N02T4
Nexperia USA Inc.
PSMN015-100B,118
Infineon Technologies
SPA07N60C2
Alpha & Omega Semiconductor Inc.