FDG6335N
onsemi
onsemi
MOSFET 2N-CH 20V 0.7A SOT-363
$0.57
Available to order
Reference Price (USD)
3,000+
$0.24308
6,000+
$0.22631
15,000+
$0.21793
30,000+
$0.21336
Exquisite packaging
Discount
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Choose the FDG6335N from onsemi for your Discrete Semiconductor Products needs. This Transistors - FETs, MOSFETs - Arrays solution is built for high-power and high-frequency applications, delivering excellent performance with minimal energy loss. Perfect for automotive electronics, wireless charging, and industrial control systems, the FDG6335N stands out for its reliability and efficiency. onsemi's advanced engineering makes this component a trusted choice for professionals.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 700mA
- Rds On (Max) @ Id, Vgs: 300mOhm @ 700mA, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 113pF @ 10V
- Power - Max: 300mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SC-88 (SC-70-6)
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