FDMS3572
onsemi
onsemi
MOSFET N-CH 80V 8.8A/22A 8MLP
$2.90
Available to order
Reference Price (USD)
3,000+
$1.15236
6,000+
$1.10968
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The FDMS3572 from onsemi redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the FDMS3572 offers the precision and reliability you need. Trust onsemi to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 16.5mOhm @ 8.8A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2490 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 78W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-MLP (5x6), Power56
- Package / Case: 8-PowerWDFN
Related Products
Vishay Siliconix
IRF9520STRRPBF
STMicroelectronics
STU7LN80K5
Fairchild Semiconductor
FDP070AN06A0
onsemi
2N7002LT3G
Vishay Siliconix
SI4116DY-T1-E3
onsemi
FDY300NZ
Infineon Technologies
IPT60R028G7XTMA1
Nexperia USA Inc.
PSMN8R5-60YS,115
onsemi
SVD2955T4G
Diodes Incorporated