FDN5630
onsemi
onsemi
MOSFET N-CH 60V 1.7A SUPERSOT3
$0.49
Available to order
Reference Price (USD)
3,000+
$0.15652
6,000+
$0.14642
15,000+
$0.13632
30,000+
$0.12925
75,000+
$0.12852
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The FDN5630 from onsemi redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the FDN5630 offers the precision and reliability you need. Trust onsemi to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 100mOhm @ 1.7A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
Related Products
Diodes Incorporated
DMP21D6UFD-7
Wolfspeed, Inc.
C2M1000170J
onsemi
FCPF260N65FL1-F154
Infineon Technologies
SPA02N80C3XKSA1
Rectron USA
RM6N800TI
Panjit International Inc.
PJQ5425_R2_00001
UnitedSiC
UF3C065080K4S
STMicroelectronics
STB24N60M2
Infineon Technologies
AUIRFR8401TRL
Infineon Technologies