FDP040N06
Fairchild Semiconductor
Fairchild Semiconductor
MOSFET N-CH 60V 120A TO220-3
$1.73
Available to order
Reference Price (USD)
1+
$1.73000
500+
$1.7127
1000+
$1.6954
1500+
$1.6781
2000+
$1.6608
2500+
$1.6435
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power electronics with the FDP040N06 single MOSFET from Fairchild Semiconductor. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the FDP040N06 combines cutting-edge technology with Fairchild Semiconductor's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 4mOhm @ 75A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 8235 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 231W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
Related Products
Toshiba Semiconductor and Storage
TPW1R104PB,L1XHQ
Infineon Technologies
IPP024N08NF2SAKMA1
Infineon Technologies
SPW07N60CFD
Texas Instruments
CSD22204W
PN Junction Semiconductor
P3M17040K4
Infineon Technologies
IPW50R299CP
Rohm Semiconductor
RJ1G08CGNTLL
Renesas Electronics America Inc
UPA1725G-E1-A
Infineon Technologies
AUIRF7640S2TR
Vishay Siliconix