FDP047N08
onsemi
onsemi
MOSFET N-CH 75V 164A TO220-3
$3.56
Available to order
Reference Price (USD)
1+
$3.62000
10+
$3.25000
100+
$2.68320
800+
$1.99090
1,600+
$1.86504
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the FDP047N08 from onsemi, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the FDP047N08 ensures reliable performance in demanding environments. Upgrade your circuit designs with onsemi's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75 V
- Current - Continuous Drain (Id) @ 25°C: 164A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 4.7mOhm @ 80A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 9415 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 268W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
Related Products
Diodes Incorporated
DMN2500UFB4-7
Infineon Technologies
AUIRF4104S
IXYS
IXTP32N65XM
Toshiba Semiconductor and Storage
TK6R7P06PL,RQ
Microchip Technology
APT30M40JVR
Nexperia USA Inc.
PMV65XP,215
Infineon Technologies
BSZ440N10NS3GATMA1
STMicroelectronics
STP35N65DM2
Renesas Electronics America Inc
2SJ325-AZ
Diodes Incorporated