FDS8870
onsemi
onsemi
MOSFET N-CH 30V 18A 8SOIC
$1.61
Available to order
Reference Price (USD)
2,500+
$0.72211
5,000+
$0.68600
12,500+
$0.66021
Exquisite packaging
Discount
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Meet the FDS8870 by onsemi, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The FDS8870 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose onsemi.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 4.2mOhm @ 18A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4615 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOIC
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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