FDV303N
onsemi
onsemi
MOSFET N-CH 25V 680MA SOT23
$0.43
Available to order
Reference Price (USD)
3,000+
$0.07598
6,000+
$0.06641
15,000+
$0.05684
30,000+
$0.05365
75,000+
$0.05046
150,000+
$0.04408
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the FDV303N single MOSFET from onsemi. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust onsemi's FDV303N for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25 V
- Current - Continuous Drain (Id) @ 25°C: 680mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
- Rds On (Max) @ Id, Vgs: 450mOhm @ 500mA, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 350mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
Related Products
Diodes Incorporated
DMN90H2D2HCTI
Vishay Siliconix
SI7686DP-T1-E3
onsemi
FDP3652
Fairchild Semiconductor
FCP25N60N
Infineon Technologies
IRF540NSTRRPBF
onsemi
FQB7P20TM-F085
Infineon Technologies
IRLH5034TRPBF
Microchip Technology
APT38M50J
onsemi
NTMFS6B05NT1G
Infineon Technologies