FDZ3N513ZT
Fairchild Semiconductor
Fairchild Semiconductor
MOSFET P-CH 30V 1.1A 4WLCSP
$0.32
Available to order
Reference Price (USD)
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$0.32000
500+
$0.3168
1000+
$0.3136
1500+
$0.3104
2000+
$0.3072
2500+
$0.304
Exquisite packaging
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Optimize your power electronics with the FDZ3N513ZT single MOSFET from Fairchild Semiconductor. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the FDZ3N513ZT combines cutting-edge technology with Fairchild Semiconductor's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 1.1A
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 462mOhm @ 300mA, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
- Vgs (Max): +5.5V, -300mV
- Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 15 V
- FET Feature: Schottky Diode (Isolated)
- Power Dissipation (Max): 1W (Ta)
- Operating Temperature: -55°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 4-WLCSP (1x1)
- Package / Case: 4-XFBGA, WLCSP
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