FEPB16GTHE3_A/P
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 400V 8A TO263AB
$1.17
Available to order
Reference Price (USD)
1+
$1.17150
500+
$1.159785
1000+
$1.14807
1500+
$1.136355
2000+
$1.12464
2500+
$1.112925
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Introducing Vishay General Semiconductor - Diodes Division's FEPB16GTHE3_A/P, a game-changing diode array in the Discrete Semiconductor Products category. Specifically engineered for high-frequency rectification, this component minimizes switching losses in SMPS and RF circuits. Its hermetically sealed package provides exceptional moisture resistance for outdoor applications like traffic signal systems and railway electronics. Trust Vishay General Semiconductor - Diodes Division's decades of semiconductor expertise embedded in every FEPB16GTHE3_A/P for uncompromising performance.
Specifications
- Product Status: Active
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400 V
- Current - Average Rectified (Io) (per Diode): 8A
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 400 V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB (D²PAK)
Related Products
Vishay General Semiconductor - Diodes Division
VS-16CTQ080STRR-M3
Littelfuse Inc.
MBRF20200CTR
Vishay General Semiconductor - Diodes Division
V20D45CHM3/I
Diodes Incorporated
PDU620CT-13
GeneSiC Semiconductor
FST12080
Rohm Semiconductor
BAW56HYFHT116
onsemi
MBRB60H100CTT4G
Yangzhou Yangjie Electronic Technology Co.,Ltd
MBR10200CD-F1-0000HF
Sensata-Crydom
F1857CAD600
Rohm Semiconductor