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FESB16BT-E3/81

Vishay General Semiconductor - Diodes Division
FESB16BT-E3/81 Preview
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 16A TO263AB
$1.07
Available to order
Reference Price (USD)
800+
$1.10188
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 16A
  • Voltage - Forward (Vf) (Max) @ If: 975 mV @ 16 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 100 V
  • Capacitance @ Vr, F: 175pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB (D²PAK)
  • Operating Temperature - Junction: -65°C ~ 150°C

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