FESB16JT-E3/81
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 16A TO263AB
$1.87
Available to order
Reference Price (USD)
800+
$0.99970
1,600+
$0.84823
2,400+
$0.82298
Exquisite packaging
Discount
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Optimize your electronic designs with the FESB16JT-E3/81 single rectifier diode from Vishay General Semiconductor - Diodes Division. This diode, part of the Discrete Semiconductor Products family, offers exceptional rectification efficiency and thermal stability. Its compact design and high current capacity make it suitable for space-constrained applications like mobile devices, laptops, and IoT gadgets. The FESB16JT-E3/81 is also ideal for automotive electronics, including alternators and voltage regulators, where reliability is critical. Vishay General Semiconductor - Diodes Division's commitment to innovation ensures that the FESB16JT-E3/81 meets the highest industry standards for performance and longevity.
Specifications
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 16A
- Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 600 V
- Capacitance @ Vr, F: 145pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB (D²PAK)
- Operating Temperature - Junction: -65°C ~ 150°C
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