FESB8ATHE3_A/I
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 50V 8A TO263AB
$0.81
Available to order
Reference Price (USD)
1+
$0.80850
500+
$0.800415
1000+
$0.79233
1500+
$0.784245
2000+
$0.77616
2500+
$0.768075
Exquisite packaging
Discount
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The FESB8ATHE3_A/I single rectifier diode by Vishay General Semiconductor - Diodes Division is a standout in the Diodes - Rectifiers - Single classification. Known for its robust construction and high rectification efficiency, it is perfect for demanding applications like electric vehicle charging stations and industrial robotics. Its low power dissipation and high thermal stability ensure optimal performance in data storage systems and server farms. The FESB8ATHE3_A/I is also used in consumer gadgets, such as smartphones and tablets, highlighting its adaptability. Vishay General Semiconductor - Diodes Division's FESB8ATHE3_A/I is the ultimate solution for high-performance rectification needs.
Specifications
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 50 V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 50 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB (D²PAK)
- Operating Temperature - Junction: -55°C ~ 150°C
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