FESB8DT-E3/81
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 8A TO263AB
$0.78
Available to order
Reference Price (USD)
800+
$0.79278
Exquisite packaging
Discount
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Enhance your circuit performance with the FESB8DT-E3/81 single rectifier diode from Vishay General Semiconductor - Diodes Division. This Discrete Semiconductor Product is engineered for precision and efficiency, offering low forward voltage and high surge tolerance. Ideal for rectification in power adapters, welding equipment, and UPS systems, the FESB8DT-E3/81 delivers consistent results under heavy loads. Its applications extend to aerospace and defense systems, where reliability cannot be compromised. Vishay General Semiconductor - Diodes Division's FESB8DT-E3/81 is the go-to choice for engineers seeking robust and high-performing rectifier diodes.
Specifications
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 200 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB (D²PAK)
- Operating Temperature - Junction: -55°C ~ 150°C
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