FESB8GT-E3/81
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 8A TO263AB
$0.81
Available to order
Reference Price (USD)
800+
$0.82730
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Maximize your device's efficiency with the FESB8GT-E3/81 single rectifier diode from Vishay General Semiconductor - Diodes Division. This Discrete Semiconductor Product is crafted for precision, offering fast recovery times and high current handling. It is ideal for use in power supplies, motor controls, and lighting systems, where energy efficiency is crucial. The FESB8GT-E3/81 is also employed in agricultural machinery and marine electronics, proving its versatility across industries. Vishay General Semiconductor - Diodes Division's FESB8GT-E3/81 is synonymous with reliability, making it a trusted choice for engineers worldwide.
Specifications
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400 V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 400 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB (D²PAK)
- Operating Temperature - Junction: -55°C ~ 150°C
Related Products
Vishay General Semiconductor - Diodes Division
BYM13-20HE3/97
Nexperia USA Inc.
PMEG40T20EPX
GeneSiC Semiconductor
MURH7020R
Panjit International Inc.
SBA0840AS-AU_R1_000A1
Vishay General Semiconductor - Diodes Division
BYWB29-100HE3_A/P
Vishay General Semiconductor - Diodes Division
BYM10-400-E3/97
Vishay General Semiconductor - Diodes Division
U3D-E3/57T
EIC SEMICONDUCTOR INC.
FR304T/R
Vishay General Semiconductor - Diodes Division
US1K-E3/61T
Microchip Technology