FESB8JT-E3/45
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 8A TO263AB
$0.64
Available to order
Reference Price (USD)
1+
$0.64086
500+
$0.6344514
1000+
$0.6280428
1500+
$0.6216342
2000+
$0.6152256
2500+
$0.608817
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The FESB8JT-E3/45 by Vishay General Semiconductor - Diodes Division is a high-efficiency single rectifier diode designed for modern electronic applications. Part of the Diodes - Rectifiers - Single category, it provides excellent performance in power conversion and voltage regulation. Its low leakage current and high surge capacity make it suitable for medical imaging devices, data centers, and telecommunications infrastructure. The FESB8JT-E3/45 is also used in smart home devices and wearable technology, ensuring seamless operation. Vishay General Semiconductor - Diodes Division's expertise in semiconductor technology guarantees that the FESB8JT-E3/45 delivers top-notch performance in any application.
Specifications
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 600 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB (D²PAK)
- Operating Temperature - Junction: -55°C ~ 150°C
Related Products
Wolfspeed, Inc.
C6D10065G-TR
Micro Commercial Co
US2M-TP
Nexperia USA Inc.
PMEG60T50ELPX
SMC Diode Solutions
S4D10120H
IXYS
DSEI120-06A
Vishay General Semiconductor - Diodes Division
SF4007-TR
Comchip Technology
SS110-HF
Taiwan Semiconductor Corporation
TUAS8K
Diotec Semiconductor
SKL14
Global Power Technology-GPT