FESF8CTHE3_A/P

Vishay General Semiconductor - Diodes Division

Manufacturer

Vishay General Semiconductor - Diodes Division

Description:

DIODE GEN PURP 150V 8A ITO220AC

Datasheet:

FESF8CTHE3_A/P Datasheet

$0.94

Available to order

Reference Price (USD)

$0.94050

500+

$0.931095

1000+

$0.92169

1500+

$0.912285

2000+

$0.90288

2500+

$0.893475

Exquisite packaging

Discount

TT / Paypal / Credit Card / Western Union / Money Gram

The FESF8CTHE3_A/P by Vishay General Semiconductor - Diodes Division is a high-efficiency single rectifier diode designed for modern electronic applications. Part of the Diodes - Rectifiers - Single category, it provides excellent performance in power conversion and voltage regulation. Its low leakage current and high surge capacity make it suitable for medical imaging devices, data centers, and telecommunications infrastructure. The FESF8CTHE3_A/P is also used in smart home devices and wearable technology, ensuring seamless operation. Vishay General Semiconductor - Diodes Division's expertise in semiconductor technology guarantees that the FESF8CTHE3_A/P delivers top-notch performance in any application.

Specifications

Product Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack, Isolated Tab
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

Shopping cart

FESF8CTHE3_A/P

Reference Price (USD)

Specifications

Related Products

SE15PJ-M3/84A

1N4454UR-1/TR

SS1040_R1_00001

V3PAL45HM3_A/I

JANTX1N6642UB/TR

MBR10100

SE10DDHM3/I

MBRD835LT4G

SD103BWS-E3-18

GP10K-E3/54