FGH60N60SMD
onsemi
onsemi
IGBT FIELD STOP 600V 120A TO247
$5.79
Available to order
Reference Price (USD)
1+
$6.29000
10+
$5.66600
450+
$4.44833
900+
$4.01171
1,350+
$3.41421
Exquisite packaging
Discount
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Upgrade your power management systems with the FGH60N60SMD Single IGBT transistor from onsemi. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the FGH60N60SMD provides reliable and efficient operation. onsemi's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose FGH60N60SMD for your critical power needs.
Specifications
- Product Status: Active
- IGBT Type: Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 120 A
- Current - Collector Pulsed (Icm): 180 A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A
- Power - Max: 600 W
- Switching Energy: 1.26mJ (on), 450µJ (off)
- Input Type: Standard
- Gate Charge: 189 nC
- Td (on/off) @ 25°C: 18ns/104ns
- Test Condition: 400V, 60A, 3Ohm, 15V
- Reverse Recovery Time (trr): 39 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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