FII30-12E
IXYS
IXYS
IGBT H BRIDGE 1200V 33A I4PAK5
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Upgrade your power electronics with the FII30-12E IGBT array by IXYS, a standout in the Transistors - IGBTs - Arrays subcategory. Engineered for precision, this Discrete Semiconductor Product offers unmatched voltage handling and minimal conduction losses. Its advanced design supports parallel connectivity for scalable solutions. Primary applications include UPS systems, induction heating, and EV charging stations, where its durability shines in sectors such as data centers and public transportation infrastructure.
Specifications
- Product Status: Obsolete
- IGBT Type: NPT
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 33 A
- Power - Max: 150 W
- Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 20A
- Current - Collector Cutoff (Max): 200 µA
- Input Capacitance (Cies) @ Vce: 1.2 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: i4-Pac™-5
- Supplier Device Package: ISOPLUS i4-PAC™
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