FMMT411FDBW-7
Diodes Incorporated
Diodes Incorporated
SS BIPOLAR TRANSISTORS W-DFN2020
$3.12
Available to order
Reference Price (USD)
1+
$3.12000
500+
$3.0888
1000+
$3.0576
1500+
$3.0264
2000+
$2.9952
2500+
$2.964
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The FMMT411FDBW-7 by Diodes Incorporated is a premium Bipolar Junction Transistor (BJT) designed for superior performance in various electronic applications. This single BJT transistor features high current handling and fast switching speeds, making it ideal for power management and control systems. Commonly used in automotive electronics, LED drivers, and power supplies, the FMMT411FDBW-7 ensures efficient and stable operation. Backed by Diodes Incorporated's reputation for quality, this transistor is a trusted choice for engineers and designers seeking reliable discrete semiconductor solutions.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 5 A
- Voltage - Collector Emitter Breakdown (Max): 15 V
- Vce Saturation (Max) @ Ib, Ic: 100mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
- Power - Max: 1.7 W
- Frequency - Transition: 110MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-UDFN Exposed Pad
- Supplier Device Package: W-DFN2020-3 (Type A)
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