FMMT411TD
Diodes Incorporated
Diodes Incorporated
AVALANCHE TRANSISTOR SOT23 T&R 0
$3.06
Available to order
Reference Price (USD)
1+
$3.06170
500+
$3.031083
1000+
$3.000466
1500+
$2.969849
2000+
$2.939232
2500+
$2.908615
Exquisite packaging
Discount
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Experience unmatched performance with the FMMT411TD Bipolar Junction Transistor (BJT) by Diodes Incorporated. This single BJT transistor is crafted for high gain and low noise, making it ideal for audio and RF applications. Whether you're working on amplifiers, oscillators, or signal processors, the FMMT411TD delivers exceptional results. Its rugged design ensures reliability in harsh conditions, making it a favorite among engineers. Choose Diodes Incorporated for premium discrete semiconductor products that power the future of electronics.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 600 mA
- Voltage - Collector Emitter Breakdown (Max): 15 V
- Vce Saturation (Max) @ Ib, Ic: 100mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
- Power - Max: 730 mW
- Frequency - Transition: 40MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23 (Type DN)
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