FMMT415TD
Diodes Incorporated
Diodes Incorporated
TRANS NPN 100V 0.5A SOT23-3
$9.03
Available to order
Reference Price (USD)
1+
$9.03000
500+
$8.9397
1000+
$8.8494
1500+
$8.7591
2000+
$8.6688
2500+
$8.5785
Exquisite packaging
Discount
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Enhance your circuit designs with the FMMT415TD Bipolar Junction Transistor (BJT) from Diodes Incorporated. This single BJT transistor offers exceptional performance in amplification and switching applications. Its high gain and low power dissipation make it suitable for use in audio equipment, sensors, and communication devices. The FMMT415TD is built to withstand harsh environments, ensuring reliability in industrial and consumer applications. Trust Diodes Incorporated to deliver high-quality discrete semiconductor products that meet your technical requirements.
Specifications
- Product Status: Active
- Transistor Type: NPN - Avalanche Mode
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 100 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 10mA, 10V
- Power - Max: 330 mW
- Frequency - Transition: 40MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
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