FMMTL717QTA
Diodes Incorporated
Diodes Incorporated
SS LOW SAT TRANSISTOR SOT23 T&R
$0.18
Available to order
Reference Price (USD)
1+
$0.18270
500+
$0.180873
1000+
$0.179046
1500+
$0.177219
2000+
$0.175392
2500+
$0.173565
Exquisite packaging
Discount
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The FMMTL717QTA Bipolar Junction Transistor (BJT) by Diodes Incorporated is a versatile component in the discrete semiconductor products category. Designed for single-stage amplification and switching, this BJT transistor is widely used in medical devices, instrumentation, and power electronics. With its excellent thermal stability and low leakage current, the FMMTL717QTA provides consistent performance in demanding applications. Choose Diodes Incorporated for cutting-edge semiconductor solutions that drive innovation and efficiency in your projects.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1.25 A
- Voltage - Collector Emitter Breakdown (Max): 12 V
- Vce Saturation (Max) @ Ib, Ic: 290mV @ 50mA, 1.25A
- Current - Collector Cutoff (Max): 10nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
- Power - Max: 500 mW
- Frequency - Transition: 205MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
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