FP150R12N3T7B11BPSA1
Infineon Technologies
Infineon Technologies
LOW POWER ECONO
$370.94
Available to order
Reference Price (USD)
1+
$370.94000
500+
$367.2306
1000+
$363.5212
1500+
$359.8118
2000+
$356.1024
2500+
$352.393
Exquisite packaging
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The FP150R12N3T7B11BPSA1 by Infineon Technologies redefines performance in the IGBT modules segment of Discrete Semiconductor Products. Featuring sixth-generation field-stop technology, this power transistor delivers optimal switching characteristics and short-circuit withstand capability. Key attributes include: 175 C maximum junction temperature, low EMI generation, and integrated current sensing. Industrial applications span from elevator drives and CNC machinery to large-scale HVAC systems. A practical implementation would be using the FP150R12N3T7B11BPSA1 in high-efficiency servo controllers for manufacturing automation. Infineon Technologies combines innovation with quality in every FP150R12N3T7B11BPSA1 module.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 150 A
- Power - Max: 20 mW
- Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 150A
- Current - Collector Cutoff (Max): 12 µA
- Input Capacitance (Cies) @ Vce: 30.1 nF @ 25 V
- Input: Three Phase Bridge Rectifier
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-ECONO3
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