FQA24N60
onsemi
onsemi
MOSFET N-CH 600V 23.5A TO3PN
$7.18
Available to order
Reference Price (USD)
1+
$6.72000
10+
$5.99600
450+
$4.43711
900+
$3.59766
1,350+
$3.35781
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power electronics with the FQA24N60 single MOSFET from onsemi. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the FQA24N60 combines cutting-edge technology with onsemi's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 23.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 240mOhm @ 11.8A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 310W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3PN
- Package / Case: TO-3P-3, SC-65-3
Related Products
STMicroelectronics
STW45NM50
Fairchild Semiconductor
HUF75631SK8
Toshiba Semiconductor and Storage
TK8A60W,S4VX
Fairchild Semiconductor
FDD6680
onsemi
FQPF7P20
Infineon Technologies
IPB081N06L3GATMA1
Vishay Siliconix
SI3424BDV-T1-GE3
Nexperia USA Inc.
PMV28ENER
Rectron USA
RM3139K
Rectron USA