FQB11N40CTM
onsemi
onsemi
MOSFET N-CH 400V 10.5A D2PAK
$2.72
Available to order
Reference Price (USD)
800+
$0.95276
1,600+
$0.87822
2,400+
$0.82089
5,600+
$0.79222
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the FQB11N40CTM by onsemi, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the FQB11N40CTM is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Last Time Buy
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 400 V
- Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 530mOhm @ 5.25A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1090 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 135W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D²PAK (TO-263)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Rectron USA
RM1216
Infineon Technologies
IPA60R280C6XKSA1
Infineon Technologies
IRFB7540PBF
Rohm Semiconductor
SCT3022ALHRC11
Vishay Siliconix
SIHH26N60EF-T1-GE3
Infineon Technologies
SPD30N03S2L20GBTMA1
STMicroelectronics
STF30N10F7
IXYS
IXFP22N65X2
Diodes Incorporated
DMP2045U-13
Infineon Technologies